Organometallic Vapour Phase Epitaxy of Galliumnitride Using Ga(CH3)3 · N(CH3)3-Adduct Pyrolysis
- 1 January 1986
- journal article
- research article
- Published by Wiley in Crystal Research and Technology
- Vol. 21 (1) , 9-14
- https://doi.org/10.1002/crat.2170210104
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- GaN blue light emitting diodes prepared by metalorganic chemical vapor depositionJournal of Applied Physics, 1984
- Deposition of GaAs Epitaxial Layers by Organometallic CVD: Temperature and Orientation DependenceJournal of the Electrochemical Society, 1983
- On the origin of free carriers in high‐conducting n‐GaNCrystal Research and Technology, 1983
- Growth of GaN Thin‐Films from Triethylgallium MonamineJournal of the Electrochemical Society, 1975
- Lumineszenzeigenschaften von pyrolytisch abgeschiedenem GaNCrystal Research and Technology, 1975
- Preparation of epitaxial galliumnitrideMaterials Research Bulletin, 1974
- Luminescence in epitaxial GaN : CdJournal of Applied Physics, 1974
- Epitaktische Abscheidung von GaAs im System Ga(CH3)3-AsH3-H2 (I) Autoepitaktische AbscheidungCrystal Research and Technology, 1974
- Donor-acceptor pair recombination in GaNSolid State Communications, 1971
- The Use of Metalorganics in the Preparation of Semiconductor MaterialsJournal of the Electrochemical Society, 1971