Protons and heavy ions induced stuck bits on large capacity RAMs

Publisher Website

30 December 2002

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 468-472
https://doi.org/10.1109/radecs.1993.316527

Abstract

No abstract available

Keywords

This publication has 7 references indexed in Scilit:

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IEEE Transactions on Nuclear Science, 1987
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IEEE Transactions on Nuclear Science, 1985
Dose Dependence of Single Event Upset Rate in MOS dRAMS
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