Critical issues in the MBE growth of Ga0.47In0.53As for waveguide/PIN/JFET integration
- 1 May 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 111 (1-4) , 1084-1088
- https://doi.org/10.1016/0022-0248(91)91138-z
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Waveguide-integrated pin photodiode on InPElectronics Letters, 1987
- An investigation of GaAs films grown by MBE at low substrate temperatures and growth ratesJournal of Vacuum Science & Technology B, 1983
- Growth temperature dependence in molecular beam epitaxy of gallium arsenideJournal of Crystal Growth, 1978