Solid-State Reaction between Manganese Thin Films and Silicon carbide
- 1 August 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (8R)
- https://doi.org/10.1143/jjap.24.940
Abstract
The solid-state reaction between Mn thin films and SiC ceramic was investigated at annealing temperatures between 450 and 600°C using Auger electron spectroscopy, X-ray photoelectron spectroscopy, and X-ray diffraction. Carbon was found to diffuse readily into the manganese layer after annealing for 1 min at 450°C, forming manganese carbide; and the silicon thus released interdiffuses with manganese above 550°C to form manganese silicide. The activation energy for the formation of the manganese carbide was 15.5 kcal/mol.Keywords
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