Very high electron mobility In0.8Ga0.2As heterostructure grown by molecular beam epitaxy
- 1 December 1991
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 20 (12) , 1081-1085
- https://doi.org/10.1007/bf03030211
Abstract
No abstract availableKeywords
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