Centers in Ionic Semiconductor
- 30 March 1998
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 80 (13) , 2949-2952
- https://doi.org/10.1103/physrevlett.80.2949
Abstract
Analysis of thermally and optically induced transformations of metastable Ga centers in the wide-gap, predominantly ionic semiconductor points to the existence of two metastable states of the center. The configuration-coordinate model of the center is discussed and its energy parameters are determined. It is concluded that this center is not just “ -like,” as was initially assumed, but is a true center with a shallow donor and two deep negative- states.
Keywords
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