Photoluminescence characterization of molecular beam epitaxial silicon
- 30 December 1989
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 183 (1-2) , 235-254
- https://doi.org/10.1016/0040-6090(89)90449-5
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Photoluminescence from MBE Si grown at low temperatures; donor bound excitons and decorated dislocationsSemiconductor Science and Technology, 1989
- The optical properties of luminescence centres in siliconPhysics Reports, 1989
- Photoluminescence from Defects in Silicon Grown by Molecular Beam EpitaxyMaterials Science Forum, 1989
- New photoluminescence defect at 1.0192 eV in silicon molecular beam epitaxy layers ascribed to CuApplied Physics Letters, 1987
- A model for radiation damage effects in carbon-doped crystalline siliconSemiconductor Science and Technology, 1987
- Room-temperature irradiation of silicon doped with carbonSemiconductor Science and Technology, 1987
- Calibration of the photoluminescence technique for measuring B, P and Al concentrations in Si in the range 1012to 1015cm-3using Fourier transform spectroscopySemiconductor Science and Technology, 1987
- Subthreshold Radiation Damage in Silicon: Carbon Isotope Measurements on Cs-SiI-Cs ComplexesMaterials Science Forum, 1986
- Photoluminescence studies of silicon molecular beam epitaxy layersJournal of Vacuum Science & Technology B, 1985
- Dislocation-related photoluminescence in siliconApplied Physics A, 1985