Test structure to investigate the series resistance components of source/drain structure
- 1 October 1997
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 18 (10) , 477-479
- https://doi.org/10.1109/55.624920
Abstract
The source and drain (S/D) structure is a key element in scaling down the MOSFET for low-power applications below 0.25-/spl mu/m dimensions. Here, we report on a simple test structure and show how more detailed information on the parasitic series resistance components of deep submicron devices can be obtained. Specifically, the dependence of the different resistance components on the process parameters like dose and energy of implantation, temperature treatment, spacer width, and silicide formation can be investigated with high accuracy.Keywords
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