Accurate HEMT Modeling for Non-Linear Simulation
- 1 September 1992
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 2, 1201-1205
- https://doi.org/10.1109/euma.1992.335867
Abstract
A complete extraction method to define non-linear models for HEMT devices has been developped. The method is based on broadband small signal S-parameter and DC pulse measurements. Because of the self-consistent approach used for the parameter extraction, the complementarity of both measurement techniques is proved. A model has been validated up to 26 GHz for a 0.25 × 200 μm HEMT device for both hot and cold operating ranges and implemented into the LIBRA non-linear simulator.Keywords
This publication has 6 references indexed in Scilit:
- A new method for determining the FET small-signal equivalent circuitIEEE Transactions on Microwave Theory and Techniques, 1988
- GaAs FET device and circuit simulation in SPICEIEEE Transactions on Electron Devices, 1987
- Design of Broad-Band Power GaAs FET AmplifiersIEEE Transactions on Microwave Theory and Techniques, 1984
- Compact DC model of GaAs FETs for large-signal computer calculationIEEE Journal of Solid-State Circuits, 1983
- A MESFET Model for Use in the Design of GaAs Integrated CircuitsIEEE Transactions on Microwave Theory and Techniques, 1980
- Determination of the Basic Device Parameters of a GaAs MESFETBell System Technical Journal, 1979