Effects of buffer layers in GaAs-In0.2Al0.8As strained-layer superlattices
- 27 January 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (4) , 281-283
- https://doi.org/10.1063/1.96580
Abstract
Raman spectroscopy has been used to study strains in GaAs‐In0.2Al0.8As strained‐layer superlattices with a fixed layer thickness (100–100 Å) and various InxAl1−xAs buffer layers [x=0 (GaAs in place of AlAs), 0.1, and 0.2]. Strain‐induced frequency shifts of the longitudinal optic phonon modes depend on the alloy composition (lattice constant) of the buffer layer. For the GaAs buffer layer (x=0) the mismatch between the superlattice and the buffer layer is accommodated by dislocations near the interface region, while for the In0.2Al0.8As buffer layer the mismatch is accommodated by the tensile strain in the GaAs layers.Keywords
This publication has 14 references indexed in Scilit:
- Raman study of GaAs-InxAl1−x As strained-layer superlatticesJournal of Applied Physics, 1985
- Raman scattering in GaSb-AlSb strained layer superlatticesApplied Physics Letters, 1985
- Structural study of GaSb/AlSb strained-layer superlatticePhysical Review B, 1985
- Mono- and Bi-Layer Superlattices of GaAs and AlAsJapanese Journal of Applied Physics, 1984
- Transition metals in siliconApplied Physics A, 1983
- Strained-layer superlattices from lattice mismatched materialsJournal of Applied Physics, 1982
- Resonant Raman scattering in GaAsPhysical Review B, 1978
- Defects in epitaxial multilayersJournal of Crystal Growth, 1975
- Stress-Induced Shifts of First-Order Raman Frequencies of Diamond- and Zinc-Blende-Type SemiconductorsPhysical Review B, 1972
- Elastic Properties of ZnS Structure SemiconductorsPhysical Review B, 1970