Structural study of GaSb/AlSb strained-layer superlattice
- 1 February 1985
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 31 (3) , 1270-1277
- https://doi.org/10.1103/physrevb.31.1270
Abstract
Owing to the lattice mismatch between GaSb and AlSb, a superlattice consisting of alternating layers of these materials will be strained. We have carried out ion-channeling measurements by backscattering of 1.76-MeV He ions, and present an experimental procedure and a data-analysis technique to measure the difference in strain between the two individual layers of the superlattice. The data analysis is based on computer simulations of channeling, the accuracy of which is supported by the many fine details of the experiments reproduced in the simulations. X-ray rocking-curve analysis yielded detailed profiles of strains in directions perpendicular and parallel to the surface. The x-ray value for the strain present at an unirradiated spot on the crystal is in excellent agreement with the value calculated by elasticity theory. In the bombarded region, the values of strain are less than the value calculated by elasticity theory. It appears that bombardment by the He ions reduced the strain by 50% and created lateral inhomogeneities in the crystal structure.Keywords
This publication has 19 references indexed in Scilit:
- Strain measurements by channeling angular scansApplied Physics Letters, 1983
- Ion channeling studies of InGaAs/GaAs strained-layer superlatticesApplied Physics Letters, 1983
- Superlattice interface and lattice strain measurement by ion channelingPhysical Review B, 1983
- Ion dechanneling due to lattice strains in semiconductor superlatticesPhysical Review B, 1983
- Ion-beam crystallography of InAs-GaSb superlatticesPhysical Review B, 1982
- Strained-layer superlattices from lattice mismatched materialsJournal of Applied Physics, 1982
- Ion backscattering and channeling study of InAs-GaSb superlatticesApplied Physics Letters, 1980
- X-ray diffraction study of interdiffusion and growth in (GaAs)n(AlAs)m multilayersJournal of Applied Physics, 1980
- Almost perfect epitaxial multilayersJournal of Vacuum Science and Technology, 1977
- X-ray diffraction study of a one-dimensional GaAs–AlAs superlatticeJournal of Applied Crystallography, 1977