Gap states in a-Si:H by photoconductivity and absorption
- 21 May 1983
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 55 (2) , 191-201
- https://doi.org/10.1016/0022-3093(83)90668-3
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Direct measurement of gap-state absorption in hydrogenated amorphous silicon by photothermal deflection spectroscopyPhysical Review B, 1982
- Disorder and the Optical-Absorption Edge of Hydrogenated Amorphous SiliconPhysical Review Letters, 1981
- Luminescence and recombination in hydrogenated amorphous siliconAdvances in Physics, 1981
- Gap state spectroscopy using two beam photoconductivity in A-SI:HSolid State Communications, 1980
- Exponential absorption edge in hydrogenated α-Si filmsSolid State Communications, 1980
- Derivation of the low-energy optical-absorption spectra of-Si: H from photoconductivityPhysical Review B, 1980
- Hole diffusion length measurements in discharge-produced aSi:HJournal of Non-Crystalline Solids, 1980
- Optical constants of rf sputtered hydrogenated amorphous SiPhysical Review B, 1979
- Electron and hole drift mobility in amorphous siliconApplied Physics Letters, 1977