A fast measurement technique for the determination of small signal parameters of the bipolar transistor
- 7 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 34, 85-90
- https://doi.org/10.1109/icmts.1989.39287
Abstract
The author deals with the measurement of small-signal parameters for modern bipolar transistors. The proposed method uses the measurement of S parameters, mathematical conversion of these S parameters to H parameters, and the circle-fit method. Since modern transistors are to be measured at low DC currents, common base measurements are preferred over common emitter measurements. How the circle-fit method can be used to extract the small-signal parameters is indicated.Keywords
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