Quantum well lasers with InAs monolayers in the active region grown at low temperature by atomic layer molecular beam epitaxy
- 1 February 1993
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 127 (1-4) , 46-49
- https://doi.org/10.1016/0022-0248(93)90574-g
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Structural characterization of highly strained InAs N monolayer lasers and quantum well structures by X-ray diffraction and transmission electron microscopyJournal of Crystal Growth, 1993
- Quantum well laser with single InAs monolayer in active regionElectronics Letters, 1992
- (InAs) 1 /(GaAs) 4 Superlattice strained quantum well laser at 980 nmElectronics Letters, 1991
- Atomic layer molecular beam epitaxy (Almbe) of III?V compounds: Growth modes and applicationsApplied Physics A, 1989