Electron Overflow to the AlGaN p-Cladding Layer in InGaN/GaN/AlGaN MQW Laser Diodes
- 1 January 1998
- journal article
- Published by Springer Nature in MRS Internet Journal of Nitride Semiconductor Research
Abstract
Current flow through an InGaN/GaN/AlGaN multi-quantum well (MQW) laser diode is simulated. We found that electron overflow to the AlGaN p-cladding layer is very large, which prevents the current injection into the MQW layers. We clarified that the electron overflow occurs easily in nitride lasers because of three intrinsic reasons; poor hole injection due to the small hole mobility and thermal velocity, the small conduction band offset for InGaN/GaN, and the high threshold carrier density. We show that the Al composition and the p-doping of the AlGaN p-cladding layer is of critical importance to obtain laser oscillation by current injection.Keywords
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