Selective epitaxial growth of silicon in pancake reactors
- 1 January 1988
- journal article
- Published by Elsevier in Chemical Engineering Science
- Vol. 43 (8) , 2031-2036
- https://doi.org/10.1016/0009-2509(88)87080-5
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Thermal Diffusion Effects in Chemical Vapor Deposition ReactorsJournal of the Electrochemical Society, 1984
- Local Loading Effect in Selective Silicon EpitaxyJapanese Journal of Applied Physics, 1984
- Crystalline Defects in Selectively Epitaxial Silicon LayersJapanese Journal of Applied Physics, 1983
- Selective Silicon Epitaxy Using Reduced Pressure TechniqueJapanese Journal of Applied Physics, 1982
- Growth and etching of silicon in chemical vapour deposition systems; The influence of thermal diffusion and temperature gradientJournal of Crystal Growth, 1975