Attenuation length of photoelectrons in thin films of SiO2 grown on Si
- 15 July 1976
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 36 (1) , 251-255
- https://doi.org/10.1016/0040-6090(76)90452-1
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Oscillations in MOS tunnelingJournal of Applied Physics, 1975
- Energy losses of hot electrons in a thin layer of SiO2 on SiApplied Physics Letters, 1972
- The band edge of amorphous SiO2 by photoinjection and photoconductivity measurementsSolid State Communications, 1971
- Photoinjection Studies of Charge Distributions in Oxides of MOS StructuresJournal of Applied Physics, 1971
- Photoinjection into SiO2: Electron Scattering in the Image Force Potential WellJournal of Applied Physics, 1971