Measurement of minority carrier lifetime with a non-ohmic contact and an electron beam
- 1 November 1966
- journal article
- Published by Elsevier in Microelectronics Reliability
- Vol. 5 (4) , 267-270
- https://doi.org/10.1016/0026-2714(66)90155-7
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Measurement of the Homogenity of a Semiconductor with an Electron BeamJapanese Journal of Applied Physics, 1965
- Measurement of the Lifetime of Minority Carriers in Semiconductors with a Scanning Electron MicroscopeJapanese Journal of Applied Physics, 1965
- Drift Mobilities in Semiconductors. I. GermaniumPhysical Review B, 1953
- Theory and Experiment for a GermaniumJunctionPhysical Review B, 1951