A universal MOSFET mobility degradation model for circuit simulation
- 1 January 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
- Vol. 9 (10) , 1123-1126
- https://doi.org/10.1109/43.62736
Abstract
No abstract availableKeywords
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