Measurement and Analysis of the Static Debye-Waller Factor of Cz-Silicon with Small Oxygen Precipitates
- 1 June 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (6R)
- https://doi.org/10.1143/jjap.27.1081
Abstract
The static Debye-Waller factor and its dependence on the crystal perfection have been obtained through the detailed analysis of the intensity distribution in X-ray diffraction topograph for heat-treated Cz-silicon crystals. The size and density of oxygen precipitates have been determined using the experimental and calculated static Debye-Waller factors and the results of the infrared absorption experiments.Keywords
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