Arsenic-doped P-type ZnTe grown by molecular beam epitaxy
- 5 August 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (6) , 688-690
- https://doi.org/10.1063/1.105366
Abstract
Efficient p doping of ZnTe by arsenic has been achieved using a Zn3As2 effusion cell. Doping levels of ZnTe/GaAs can be controlled from 1016 to 1018 cm−3. The carrier concentration is independent of the substrate used, ZnTe:As/GaAs and ZnTe:As/InP giving similar results. Spectral photoconductivity and low‐temperature photoluminescence, however, show an increase of deep levels for doping levels higher than 1017 cm−3 but electrical measurements show no saturation for doping as high as 1018 cm−3.Keywords
This publication has 14 references indexed in Scilit:
- Molecular beam epitaxy of ZnSe1−xTex ternary alloysApplied Physics Letters, 1991
- Growth and characterization of MBE-grown ZnTe:PJournal of Crystal Growth, 1989
- Effects of Zn to Te ratio on the molecular-beam epitaxial growth of ZnTe on GaAsJournal of Applied Physics, 1988
- Band offset of the ZnSe–ZnTe superlattices: A fit to photoluminescence data by k⋅p theoryJournal of Vacuum Science & Technology B, 1988
- Molecular beam epitaxial growth of a novel strained-layer superlattice system: CdTe-ZnTeApplied Physics Letters, 1986
- Photoluminescence study of ZnSe–ZnTe strained-layer superlattices grown on InP substratesJournal of Applied Physics, 1986
- Raman scattering from ZnTe-ZnSe strained-layer superlatticesApplied Physics Letters, 1986
- Molecular Beam Epitaxial Growth of ZnTe and ZnSeJournal of the Electrochemical Society, 1980
- Molecular beam epitaxy of ZnSexTe1−x (0 ≲ x ≲ 1)Journal of Crystal Growth, 1978
- Molecular Beam Epitaxy of ZnTe Single Crystal Thin FilmsJapanese Journal of Applied Physics, 1976