Characterization of mobility-lifetime products and interface property in amorphous silicon p-i-n junctions
- 1 December 1983
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 59-60, 1103-1106
- https://doi.org/10.1016/0022-3093(83)90359-9
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Variable minority carrier transport model for amorphous silicon solar cellsSolar Cells, 1983
- Properties and structure of a-SiC:H for high-efficiency a-Si solar cellJournal of Applied Physics, 1982
- Electrophotographic studies of glow-discharge amorphous siliconPhilosophical Magazine Part B, 1981
- Electron Spin Resonance of Doped Glow‐Discharge Amorphous SiliconPhysica Status Solidi (b), 1981
- Optically induced electron spin resonance in doped amorphous siliconSolid State Communications, 1977