Fe reactions with β-SiC
- 15 June 1987
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 61 (12) , 5299-5302
- https://doi.org/10.1063/1.338932
Abstract
The reaction between β-SiC and a layer of sputter deposited Fe has been investigated by Auger profiling. The samples were vacuum annealed in the analysis chamber up to 800 °C. After a 610 °C anneal an interfacial layer of iron carbide appeared, probably the result of a reaction between the Fe and an adsorbed layer of hydrocarbons. This interfacial layer appears to prevent a reaction with the substrate until the temperature is raised to 800 °C. At this temperature a rapid and violent reaction occurs.This publication has 4 references indexed in Scilit:
- Optical properties of semiconducting iron disilicide thin filmsJournal of Applied Physics, 1985
- Solid-state reaction of iron on β-SiCJournal of Applied Physics, 1985
- Surface studies of epitaxial β-SiC on Si(100)Journal of Applied Physics, 1984
- Production of large-area single-crystal wafers of cubic SiC for semiconductor devicesApplied Physics Letters, 1983