High‐quality nonpolar m ‐plane GaN substrates grown by HVPE

This publication has 22 references indexed in Scilit:

• Microstructure and enhanced morphology of planar nonpolar m-plane GaN grown by hydride vapor phase epitaxy
  Journal of Electronic Materials, 2005
• Visible light-emitting diodes using a-plane GaN–InGaN multiple quantum wells over r-plane sapphire
  Applied Physics Letters, 2004
• Characterization of a-Plane GaN/(Al,Ga)N Multiple Quantum Wells Grown via Metalorganic Chemical Vapor Deposition
  Japanese Journal of Applied Physics, 2003
• The toughest transistor yet [GaN transistors]
  IEEE Spectrum, 2002
• Molecular-beam epitaxy of GaN/AlxGa1−xN multiple quantum wells on R-plane (101̄2) sapphire substrates
  Applied Physics Letters, 2002
• Ten-Milliwatt Operation of an AlGaN-Based Light Emitting Diode Grown on GaN Substrate
  Physica Status Solidi (a), 2001
• Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
  Nature, 2000
• The role of piezoelectric fields in GaN-based quantum wells
  MRS Internet Journal of Nitride Semiconductor Research, 1998
• Spontaneous polarization and piezoelectric constants of III-V nitrides
  Physical Review B, 1997
• Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
  Japanese Journal of Applied Physics, 1997