Growth of CdZnTe on Si by low-pressure chemical vapor deposition
- 21 September 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (12) , 928-930
- https://doi.org/10.1063/1.98804
Abstract
Epitaxial layers of Cd1−xZnxTe (0.04≤x≤0.62) have been grown on (100) and (111) silicon substrates by a low-pressure chemical vapor deposition (LPCVD) process. Elemental metals were used as sources of cadmium and zinc and dimethyltelluride was used as a source of tellurium. The characterization of layers by x-ray diffraction, scanning electron microscope, and scanning electron microscope x-ray dispersive analysis shows that hot wall LPCVD is a viable technique to grow large-area epitaxial layers of CdZnTe on different substrates.Keywords
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