A new technique for determining the generation lifetime profile in thin semiconductor films with application to silicon-on-insulator (SOI) substrates
- 1 November 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 10 (11) , 496-499
- https://doi.org/10.1109/55.43115
Abstract
A differential technique which uses reverse-biased current-voltage (I-V) and capacitance-voltage (C-V) measurements on a p-n junction or a Schottky barrier diode for determining the generation lifetime profile in thin semiconductor films is discussed. It is shown that the bias-independent current can be eliminated by this differential technique. Furthermore, any error caused by field-enhanced current can be estimated. This method has been used to determine the generation lifetime profile in thin silicon epitaxial film grown on SIMOX substrates.Keywords
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