Argon ion damage in self-assembled quantum dots structures
- 16 November 1998
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 73 (20) , 2935-2937
- https://doi.org/10.1063/1.122635
Abstract
The effects of radiation damage exposure on InGaAs quantum wells and InAs quantum dots are compared using luminescence spectroscopy techniques. A large increase in the radiation resistance of the InAs quantum dots is observed and attributed to exciton localization in the quantum dots and a point defect strain gettering effect.Keywords
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