Hydrogen solubility in silicon and hydrogen defects present after quenching
- 1 October 1993
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 8 (10) , 1908-1911
- https://doi.org/10.1088/0268-1242/8/10/021
Abstract
Boron-doped silicon ((B) approximately 1017 cm-3) was heated in H2 gas at a temperature in the range 900h), which was infrared inactive was released during anneals at TH=9.1*1021 exp(-1.80 eV/kT) cm-3. 2 MeV electron irradiation at room temperature converted Hh into defects incorporating two hydrogen atoms, suggesting that Hh may be present as H2 molecules.Keywords
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