Concentration of atomic hydrogen diffused into silicon in the temperature range 900–1300 °C
- 24 June 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (25) , 2933-2935
- https://doi.org/10.1063/1.104726
Abstract
Boron‐doped Czochralski silicon samples with [B]∼1017 cm−3 have been heated at various temperatures in the range 800–1300 °C in an atmosphere of hydrogen and then quenched. The concentration of [H‐B] pairs was measured by infrared localized vibrational mode spectroscopy. It was concluded that the solubility of atomic hydrogen is greater than [Hs] = 5.6 × 1018 exp( − 0.95 eV/kT)cm−3 at the temperatures investigated.Keywords
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