Photoemission spectroscopy study of the Al/SiC interface
- 15 July 1986
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 60 (2) , 635-638
- https://doi.org/10.1063/1.337405
Abstract
Aluminum layers of some nanometers thickness have been deposited onto α-SiC crystals and studied by x-ray and ultraviolet photoelectron spectroscopies as a function of annealing temperature. Annealing beyond 600 °C induces a complete disappearance of metallic Al on the crystal surface, penetration of Al into the bulk, and formation of aluminum carbide. Ultraviolet photoemission spectra recorded after annealing at 360 °C could be explained by a beginning of interfacial reaction. However, there is no clear experimental evidence that reaction occurs at such a low temperature.This publication has 11 references indexed in Scilit:
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