Suppression of poly emitter bipolar hot carrier effects in an advanced BiCMOS technology
- 13 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 144-147
- https://doi.org/10.1109/bipol.1989.69478
Abstract
Bipolar hot carrier effects in phosphorous and arsenic poly emitter transistors are studied. The role of avalanche and tunnel current components in transistor current gain degradation is identified. The study indicates that transistors with tunneling emitter-phase junctions are less susceptible to current gain degradation. By optimization of emitter-base junction dopant profiles, the reliability of high-performance bipolar transistors can be significantly enhanced.Keywords
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