Long-wavelength PtSi infrared detectors fabricated by incorporating a p+ doping spike grown by molecular beam epitaxy
- 21 June 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (25) , 3318-3320
- https://doi.org/10.1063/1.109057
Abstract
By incorporating a 1‐nm‐thick p+ doping spike at the PtSi/Si interface, we have successfully demonstrated extended cutoff wavelengths of PtSi Schottky infrared detectors in the long wavelength infrared (LWIR) regime for the first time. The extended cutoff wavelengths resulted from the combined effects of an increased electric field near the silicide/Si interface due to the p+ doping spike and the Schottky image force. The p+ doping spikes were grown by molecular beam epitaxy at 450 °C using elemental boron as the dopant source, with doping concentrations ranging from 5×1019 to 2×1020 cm−3. Transmission electron microscopy indicated good crystalline quality of the doping spikes. The cutoff wavelengths were shown to increase with increasing doping concentrations of the p+ spikes. Thermionic emission dark current characteristics were observed and photoresponses in the LWIR regime were demonstrated.Keywords
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