Optical evidence for the impurity band nature of the metal-insulator transition in GaAs
- 1 April 1988
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 66 (1) , 23-27
- https://doi.org/10.1016/0038-1098(88)90484-x
Abstract
No abstract availableThis publication has 17 references indexed in Scilit:
- Anomalous Hall Effect below the Magnetic-Field-Induced Metal-Insulator Transition in Narrow-Gap SemiconductorsPhysical Review Letters, 1986
- Observation of Impurity Cyclotron Resonance inPhysical Review Letters, 1986
- Magnetic tuning of the metal-insulator transition in n-InSb at very low temperaturesSolid-State Electronics, 1985
- The magnetic field induced metal-insulator transition in indium phosphide and siliconSolid-State Electronics, 1985
- Localization, Interactions, and the Metal-Insulator TransitionScience, 1984
- Roles of the lower and the upper Hubbard bands and the donor-excitonic states in the theory of shallow-impurity states in doped semiconductorsPhysical Review B, 1980
- Scaling Theory of Localization: Absence of Quantum Diffusion in Two DimensionsPhysical Review Letters, 1979
- Conduction in non-crystalline systems IX. the minimum metallic conductivityPhilosophical Magazine, 1972
- Ionized Impurity Density in n-Type GaAsJournal of Applied Physics, 1970
- Absence of Diffusion in Certain Random LatticesPhysical Review B, 1958