Many-body effects in the luminescence of highly excited indirect superlattices
- 1 August 1990
- journal article
- Published by Optica Publishing Group in Journal of the Optical Society of America B
- Vol. 7 (8) , 1473-1480
- https://doi.org/10.1364/josab.7.001473
Abstract
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This publication has 12 references indexed in Scilit:
- Subpicosecond real-space charge transfer in type-II GaAs/AlAs superlatticesPhysical Review Letters, 1989
- Recombination mechanisms in type II (GaAs/AlAs) heterostructuresJournal of Vacuum Science & Technology B, 1988
- Indirect-direct anticrossing in GaAs-AlAs superlattices induced by an electric field: Evidence of Γ-X mixingPhysical Review Letters, 1988
- Optical properties and band structure of short-period GaAs/AlAs superlatticesJournal of Luminescence, 1987
- Longitudinal electric field effects on GaAs-AlAs type-II superlatticesApplied Physics Letters, 1987
- Effects of the layer thickness on the electronic character in GaAs-AlAs superlatticesApplied Physics Letters, 1987
- Optical evidence of the direct-to-indirect-gap transition in GaAs-AlAs short-period superlatticesPhysical Review B, 1987
- X-point excitons in AlAs/GaAs superlatticesApplied Physics Letters, 1986
- Electron theory of the optical properties of laser-excited semiconductorsProgress in Quantum Electronics, 1984
- Optical properties of highly excited direct gap semiconductorsPhysics Reports, 1981