Recent developments at HVEE

This publication has 5 references indexed in Scilit:

• The HVEE Tandetron Line; new developments and design considerations
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1992
• A dual source low-energy ion implantation system for use in silicon molecular beam epitaxy
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1991
• Performance and processing line integration of a silicon molecular beam epitaxy system
  Thin Solid Films, 1990
• Incorporation of accelerated low-energy (50–500 eV) In+ ions in Si(100) films during growth by molecular-beam epitaxy
  Journal of Applied Physics, 1989
• A versatile high intensity negative ion source
  Nuclear Instruments and Methods in Physics Research, 1983