A planar InGaAs PIN/JFET fiber-optic detector
- 1 August 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 21 (8) , 1236-1240
- https://doi.org/10.1109/jqe.1985.1072808
Abstract
A planar structure monolithic optoelectronic integrated circuit (OEIC), comprising an InGaAs PIN photodiode and an InGaAs junction field effect transistor (JFET), has been developed. A cutoff frequency of 1.3 GHz has been successfully obtained. A low dark-current characteristic has also been obtained by polyimide passivation. Design principle, fabrication procedures, and operation characteristics of the PIN/JFET are described.Keywords
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