Heteroepitaxial growth of highly oriented diamond on cubic silicon carbide
- 15 April 1997
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 81 (8) , 3490-3493
- https://doi.org/10.1063/1.365047
Abstract
We have deposited epitaxial diamond films with very low angular spread on epitaxial β-phase silicon carbide layers on silicon (001) substrates. From x-ray rocking curve measurements, half-widths of the angular spread of the crystal orientation as low as 0.6° have been determined, which is the smallest value ever reported in heteroepitaxial diamond films and appears to be smaller than those of the β-phase silicon carbide underlayers. The film surface exhibits a roughness of about 100 nm with very few discernible boundaries due to misorientation. The optimization of the bias-enhanced nucleation process and the control of selective growth are the main factors for the improvement of the crystallinity.This publication has 20 references indexed in Scilit:
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