absorption edges inSi
- 15 August 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 34 (4) , 2875-2877
- https://doi.org/10.1103/physrevb.34.2875
Abstract
We report an energy-loss investigation around the edge in Si in order to study the empty density of states above . The comparison with Ni shows in Si a reduction and broadening of the "white line," a small edge shift toward higher energies, and an branching ratio closer to the statistical value. The near-edge features within the single-particle approximation are ascribed to the part of the empty antibonding hybridized states. The absorption structures were compared with the available results of bremsstrahlung isochromat spectroscopy. Differences were found and ascribed to selection-rule effects.
Keywords
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