Low-temperature avalanche multiplication in the collector-base junction of advanced n-p-n transistors
- 1 March 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 37 (3) , 762-767
- https://doi.org/10.1109/16.47783
Abstract
No abstract availableKeywords
This publication has 24 references indexed in Scilit:
- Graded-SiGe-base, poly-emitter heterojunction bipolar transistorsIEEE Electron Device Letters, 1989
- On the low-temperature static and dynamic properties of high-performance silicon bipolar transistorsIEEE Transactions on Electron Devices, 1989
- Si/Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors produced by limited reaction processingIEEE Electron Device Letters, 1989
- Silicon-germanium base heterojunction bipolar transistors by molecular beam epitaxyIEEE Electron Device Letters, 1988
- A subnanosecond 5-kbit bipolar ECL RAMIEEE Journal of Solid-State Circuits, 1988
- An advanced high-performance trench-isolated self-aligned bipolar technologyIEEE Transactions on Electron Devices, 1987
- Non-ideal base current in bipolar transistors at low temperaturesIEEE Transactions on Electron Devices, 1987
- The temperature dependence of the amplification factor of bipolar-junction transistorsIEEE Transactions on Electron Devices, 1987
- Advanced bipolar transistor modeling: Process and device simulation tools for today's technologyIBM Journal of Research and Development, 1985
- Investigation of current-gain temperature dependence in silicon transistorsIEEE Transactions on Electron Devices, 1969