Strain and misorientation in GaAs grown on Si(001) by organometallic epitaxy
- 26 September 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (13) , 1204-1206
- https://doi.org/10.1063/1.100020
Abstract
Epitaxial GaAs grown on Si(001) by organometallic vapor phase epitaxy has been characterized for strain and misorientation, using double-crystal x-ray diffraction. (004) and (115) rocking curves indicate that the GaAs is under biaxial tensile stress, σ∥≊2.1×109 dyn/cm2, and is tetragonally distorted with unit cell dimensions 5.6424±0.0012 Å and 5.6656±0.0012 Å. The dislocation density in the GaAs, determined from the rocking curve width, is less than 4.2×107 cm−2. The GaAs(001) axis is tilted with respect to the Si(001), toward the substrate normal. This misorientation is a strain relief mechanism and is caused by shear strain energy in the nucleating GaAs.Keywords
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