EBIC study of recombination activity of oxygen precipitation related defects in si
- 15 December 1996
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 42 (1-3) , 260-264
- https://doi.org/10.1016/s0921-5107(96)01718-7
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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