On the optimal shape and location of silicided source and drain contacts

Publisher Website

25 June 2003

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 39-42
https://doi.org/10.1109/sispad.2002.1034511

Abstract

No abstract available

Keywords

This publication has 3 references indexed in Scilit:

An integrated approach for accurate simulation and modeling of the silicide-source/drain structure and the silicide-diffusion contact resistance
Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
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