Critical Thickness for Islanded Growth of Highly Strained I n x G a 1-x A s on GaAs(001)
- 1 October 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (10A) , L1427
- https://doi.org/10.7567/jjap.33.l1427
Abstract
Above a certain critical thickness, the more stable morphology of a highly strained In x Ga1- x As layer on GaAs(001) is an islanded configuration. The strain relaxation occurs mainly at the free-edges of islands and thus increases when the epilayer evolves from a two-dimensional (2D) to a three-dimensional (3D) morphology. A simple model taking into account this relaxation process as well as surface energy creation correctly predicts the critical thickness for which the 2D-3D growth mode transition is observed under usual growth conditions for this prototypical highly-mismatched system.Keywords
This publication has 23 references indexed in Scilit:
- Temperature-dependent relaxation and growth phenomena in strained As layers grown on GaAsPhysical Review B, 1993
- Kinetically controlled critical thickness for coherent islanding and thick highly strained pseudomorphic films of As on GaAs(100)Physical Review B, 1992
- Heteroepitaxial growth of strained and relaxed layers of InAs on InP investigated by RHEED and HRTEMApplied Surface Science, 1992
- Morphological instability in epitaxially strained dislocation-free solid filmsPhysical Review Letters, 1991
- Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100)Applied Physics Letters, 1990
- Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)Physical Review Letters, 1990
- Dislocation-free Stranski-Krastanow growth of Ge on Si(100)Physical Review Letters, 1990
- Lattice relaxation of InAs heteroepitaxy on GaAsJournal of Crystal Growth, 1987
- Heteroepitaxial growth of Ge films on the Si(100)-2×1 surfaceJournal of Applied Physics, 1985
- Dynamics of film growth of GaAs by MBE from Rheed observationsApplied Physics A, 1983