Methods and Results of Optical Investigations on Semiconductor Interfaces

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Abstract
Measurement of the state of polarization of reflected light (ellipsometry) permits the determination of the thickness and refractive index of thin layers formed on a surface. The IR absorption spectra of such thin layers, which can be measured by means of internal reflection spectroscopy (IRS), provide information about their chemical composition. These methods have been used to study adsorption processes and the formation of reaction layers at semiconductor interfaces, and may also be used for measurements of free charge carriers in the space‐charge region and in surface states. Results of such investigations are given in this article.

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