A batch-processed vacuum-sealed capacitive pressure sensor
- 22 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 2, 1449-1452
- https://doi.org/10.1109/sensor.1997.635737
Abstract
This paper reports a multi-transducer vacuum-sealed capacitive barometric pressure sensor. The device operates with a resolution of 25 mTorr over a pressure range from 600 to 800 Torr. The sensitivity is 27 fF/Torr (3000 ppm/Torr). The TCO at 750 Torr is 3969 ppm//spl deg/C and the TCS is about 1000 ppm//spl deg/C. The device uses a single layer of polysilicon both for sealing to the glass and for transfer of the glass electrode in the reference cavity to the outside world. The device is read out using a switched-capacitor charge integrator and an on-chip compensation capacitor.Keywords
This publication has 9 references indexed in Scilit:
- A High-accuracy Multi-element Silicon Barometric Pressure SensorPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Hermeticity Testing Of Glass-silicon Packages With On Chip Feed ThroughsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- In Situ Phosphorus-doped Polysilicon For Integrated MemsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- A study of post-chemical-mechanical polish cleaning strategiesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Gas tightness of cavities sealed by silicon wafer bondingPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Analysis and Modeling of In Situ Boron‐Doped Polysilicon Deposition by LPCVDJournal of the Electrochemical Society, 1995
- Absolute pressure sensors by air-tight electrical feedthrough structureSensors and Actuators A: Physical, 1990
- A capacitive pressure sensor with low impedance output and active suppression of parasitic effectsSensors and Actuators A: Physical, 1990
- Squeeze-film damping in solid-state accelerometersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1990