Application of ion implantation in submicron CMOS processes
- 1 April 1991
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 55 (1-4) , 9-16
- https://doi.org/10.1016/0168-583x(91)96126-6
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- A new LDD structure: total overlap with polysilicon spacer (TOPS)IEEE Electron Device Letters, 1990
- Shallow-junction diode formation by implantation of arsenic and boron through titanium-silicide films and rapid thermal annealingIEEE Transactions on Electron Devices, 1990
- Defect formation in silicon at a mask edge during crystallization of an amorphous implantation layerJournal of Applied Physics, 1989
- Narrow-width effects of shallow trench-isolated CMOS with n/sup +/-polysilicon gateIEEE Transactions on Electron Devices, 1989
- Improvement of latchup hardness by geometry and technology tuningIEEE Transactions on Electron Devices, 1988
- Optimization of the germanium preamorphization conditions for shallow-junction formationIEEE Transactions on Electron Devices, 1988
- Latchup performance of retrograde and conventional n-well CMOS technologiesIEEE Transactions on Electron Devices, 1987
- Alpha-particle-induced charge transfer between closely spaced memory cellsIEEE Transactions on Electron Devices, 1986
- A self-aligned 1-µm-channel CMOS technology with retrograde n-well and thin epitaxyIEEE Transactions on Electron Devices, 1985
- A retrograde p-well for higher density CMOSIEEE Transactions on Electron Devices, 1981