InGaAsP-InP Heterojunction Phototransistors and Light Amplifiers
- 1 April 1981
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 20 (4) , L283
- https://doi.org/10.1143/jjap.20.l283
Abstract
A very high optical gain (∼900) was obtained near the 1.1-µm wavelength by the InGaAsP-InP heterojunction phototransitor. The light amplifier, which is an integral device of a heterojunction phototransistor and a double-heterojunction laser (or light-emitting diode with confining layers), is presented. The optical bias method is described for the amplification of a weak incident light.Keywords
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