GaAs Atomic Layer Epitaxy Using the KrF Excimer Laser
- 1 August 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (8A) , L1439
- https://doi.org/10.1143/jjap.28.l1439
Abstract
Complete self-limiting monolayer growth was achieved successfully in GaAs atomic layer epitaxy (ALE) using a KrF excimer laser. In thermal growth without laser irradiation, monolayer growth was achieved only for an extremely narrow temperature range around 500°C. With laser irradiation, monolayer growth was achieved for a relatively wide temperature range from 470°C to 530°C. The expanded temperature range for ALE under laser irradiation suggests an enhanced decomposition of Ga-containing adsorbates due to the photochemical effect, but not the thermal effect.Keywords
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