Characterization of N-Type Layers Formed in Si by Ion Implantation of Hydrogen
- 1 January 1983
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Electron-irradiation studies of p–n junctions in silicon bipolar transistorsPhilosophical Magazine Part B, 1981
- Distribution of irradiation damage in silicon bombarded with hydrogenPhysical Review B, 1977
- Shallow donor formation in Si produced by proton bombardmentPhysica Status Solidi (a), 1973