Pressure-tuned resonance Raman scattering and photoluminescence studies on MBE grown bulk GaAs at theE 0 gap
- 1 August 1990
- journal article
- Published by Springer Nature in Pramana
- Vol. 35 (2) , 167-176
- https://doi.org/10.1007/bf02875290
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Resonance Raman scattering in GaAs/AlAs thin-layer superlattices under high pressurePhysical Review B, 1989
- Doubly and triply resonant raman scattering by LO phonons in GaAs/AlAs superlatticesPhysical Review B, 1988
- Triply resonant second-order Raman scattering in GaAsSolid State Communications, 1987
- Resonance Raman scattering by optical phonons in GaAs near theband gapPhysical Review B, 1987
- Pressure dependence of the E1 gap in GaSb: Resonant Raman techniqueSolid State Communications, 1984
- Light Scattering in Solids IIPublished by Springer Nature ,1982
- Resonant Raman scattering in GaAsPhysical Review B, 1978
- The double resonance in two‐phonon Raman scatteringPhysica Status Solidi (b), 1977
- Resonance raman scattering near critical pointsPhysical Review B, 1974
- Calculation of resonant second-order Raman efficiencies for allowed and forbidden scatteringPhysical Review B, 1974